feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 1 m du1516 C single n - channel trench mosfet 30v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 47.6 a t c = 70 o c 38.0 t a =25 o c 18.6 (3) t a = 70 o c 14.9 (3 ) pulsed drain current i dm 100 a power dissipation t c =25 o c p d 35.7 w t c = 70 o c 22.8 t a =25 o c 5.5 (3) t a = 70 o c 3.5 (3) single pulse avalanche energy (2) e as 53.0 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 22.7 o c/w thermal resistance, junction - to - case r jc 3.5 MDU1516 single n - channel trench mosfet 30v, 47.6 a, 9.0 m features ? v ds = 30v ? i d = 47.6 a @v gs = 10v ? r ds(on) < 9.0 m @v gs = 10v < 14.0 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested general description the MDU1516 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . MDU1516 is suitable device for dc/dc converter and general purpo se applications. s s s g g s s s d d d d d d d d powerdfn 56 d g s
feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 2 m du1516 C single n - channel trench mosfet 30v ordering information part numbe r temp. range package packing quantity rohs status mdu151 6u rh - 55~150 o c power dfn 56 tape & reel 3000 units halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - sourc e breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 .3 1.9 2.7 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 1 a t j = 55 o c - - 5 gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 14 a - 7.8 9.0 m t j = 125 o c - 11.3 13.0 v gs = 4.5v, i d = 11 a - 11.7 14.0 forward transconductance g fs v ds = 5v, i d = 10a - 31 - s dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 14 a, v gs = 10v 11.0 14.6 18.3 nc total gate charge q g(4.5v) 5.2 6.9 8.6 gate - source charge q gs - 3 .0 - gate - drain charge q gd - 2.6 - input capacitance c iss v ds = 1 5.0 v, v gs = 0v, f = 1.0mhz 662 882 1103 pf reverse transfer capacitan ce c rss 65 86 108 output capacitance c oss 134 178 223 turn - on delay time t d(on) v gs = 10v, v ds = 15.0 v, i d = 14 a , r g = 3.0 - 10.3 - ns rise time t r - 10.6 - turn - off delay time t d(off) - 23.0 - fall time t f - 7.4 - gate resistance rg f=1 mhz 2.0 3 .0 4 . 5 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1 4 a, v gs = 0v - 0.8 1.1 v body diode reverse recovery time t rr i f = 14 a, dl/dt = 100a/s - 19.5 29.3 ns body diode reverse recovery charge q rr - 11.0 16.5 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. e as is tested at starting tj = 25 , l = 0. 1 mh, i as = 18 a, v dd = 27v, v gs = 10v 3. t < 10sec.
feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 3 m du1516 C single n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - reg ion characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source curre nt and temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 4.5v 3.5v v gs = 10v 5.0v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v] 5 10 15 20 25 30 0 4 8 12 16 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 16.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes : i d = 14.0a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 0 4 8 12 16 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 -1 10 0 10 1 t a =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v]
feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 4 m du1516 C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum sa fe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve (junction - to - case) fig.1 2 transient thermal response curve (junction - to - ambient) 25 50 75 100 125 150 0 10 20 30 40 50 60 i d , drain current [a] t a , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 ? notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ? jc * r ? jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 0 300 600 900 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 4 8 12 16 0 2 4 6 8 10 v ds = 15v note : i d = 14a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10s 1s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 * notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ? ja * r ? ja (t) + t a single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? ja (t), thermal response t 1 , rectangular pulse duration [sec]
feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 5 m du1516 C single n - channel trench mosfet 30v package dimension powerdfn56 (5x6mm) d imensions are in millimeters, unless otherwise specified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 - 4.22 e 5.90 6.30 e1 5.50 6.10 e2 - 4.30 e 1.27bsc h 0.41 0.71 k 0.20 - l 0.51 0.71 0 12
feb . 20 1 4 . version 1. 3 magnachip semiconductor ltd . 6 m du1516 C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to full y defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of mag nachip semiconductor ltd.
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